surface mount switching multi-chip diode array mechanical data: * case : sot-363 * fast switching speed * ultra-small surface mount package * for general purpose switching applications * high conductance power dissipation * case material : molded plastic. ul flammability classification ration 94v-0 * moisture sensitivity : level 1 per j -std-020c * terminals : solderable per mil-std-202, method 208 * polarity : see diagram * weight : 0.006 grams(appro) features: weitron mmbd4448haqw mmbd4448hadw mmbd4448hcdw MMBD4448HSDW mmbd4448htw multi-chip diodes 500m amperes 100 volts http://ww w .weitron.com.tw so t -363 1 2 3 6 5 4 so t -363 outline dimensions unit:mm 1 2 3 a k j m l 6 5 4 b d h e c dim a b c d e h j k l m min 0.10 1.15 2.00 0.30 1.80 - 0.80 0.25 0.10 0.65 ref max 0.30 1.35 2.20 0.40 2.20 0.10 1.10 0.40 0.25 so t -363 1/4 04-jan-06 lead(pb)- f r ee p b
weitron http://www .weitron.com.tw 2/4 04-jan-06 mmbd4448haqw mmbd4448hadw mmbd4448hcdw MMBD4448HSDW mmbd4448htw characteristic symbo l value unit 100 v peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 80 v rms reverse voltage v r(rms) 57 v forward continuous current (note 1) i fm 500 m a average recti?ed output current (note 1) i o 250 m a non-repetitive peak forward surge current@ t = 1.0s @ t = 1.0s i fsm 4.0 2.0 a power dissipation (note 1) p d 200 m w thermal resistant junction to ambient air (note 1) r ja 625 c/w operating temperature range storage temperature range t j t stg +150 -65 to +150 c c @ t a = 2 5 c unless otherwise s pecified characteristic symbo l mi n ma x unit reverse breakdown voltage (note 2) i r = 100a 80 - v forward voltage (note 2) if = 5.0ma if = 10ma if = 100ma if = 150ma 0.62 - - - 0.72 0.855 1.0 1.25 v - 100 50 30 25 na a a na total capacitance vr = 6v, f = 1.0mhz - 3.5 pf - 4.0 ns maximum ratings @ t a = 2 5c unless otherwise specified electrical characteristics non-repetitive peak reverse voltage notes:1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch v rm notes:2. short duration test pulse used to minimize self-heating e?ect. reverse current (note 2) vr = 70v vr = 75v, tj = 150c vr = 25v, tj = 150c vr = 20v reverse recovery time vr = 6v, if = 5m a v ( b r ) r v f i r c t t r r
weitron http://ww w .weitron.com.tw 3/4 04-jan-06 mmbd4448haqw mmbd4448hadw mmbd4448hcdw MMBD4448HSDW mmbd4448htw ka6 mmbd4448hadw ka5 mmbd4448haqw ka7 mmbd4448hcdw ka a mmbd4448htw ka b MMBD4448HSDW device marking item marking 6 1 5 4 3 6 1 3 5 4 2 2 3 5 4 1 6 2 1 6 3 5 4 eqivalent circuit diagram 6 1 5 2 4 3
weitron http://ww w .weitron.com.tw 4/4 04-jan-06 typical characteristics 1 0 1 0 0 1 0 . 1 0 1 . 6 1 . 2 0 . 4 0 . 8 0 . 1 1 1 0 1 0 0 1 0 0 0 1 0 0 0 0 0 2 0 4 0 6 0 8 0 1 0 0 0 0 . 5 1 2 . 5 2 1 . 5 3 0 1 0 2 0 4 0 3 0 0 5 0 1 0 0 1 5 0 2 0 0 2 5 0 0 1 0 0 2 0 0 0 4 6 8 2 1 0 i , f o r w a r d c u r r e n t ( m a ) f 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 mmbd4448haqw mmbd4448hadw mmbd4448hcdw MMBD4448HSDW mmbd4448htw fig.1 typical forward characteristics v f ,instantaneous forward voltage (v) i f ,instantaneous forward current (ma) fig.2 typical reverse characteristics i r ,instantaneous reverse current (na) v r , reverse voltage(v) fig.3 typical capacitancevs .reverse voltage v r ,reversevoltage(v) c t ,total capacitance (pf) fig.4 power derating curve, total package fig.5 reverse recovery time vs forward current t rr ,reverse recovery time (ns) f=1mhz p d ,power dissipation (mw) t a , ambient temperature ( c) 1000 t a =125oc t a =125oc t a =75oc t a =75oc t a =25oc t a =25oc t a = -40oc t a = -40oc t a =0oc t a =0oc
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